Patent attributes
A program method capable of reducing a peak current of a program operation is provided. The program method of a flash memory includes following steps: charging selective bit lines and non-selective bit lines by using a virtual voltage with weak driving ability during the time from t0 to t1 and a virtual voltage with strong driving ability during the time from t1 to t2, switching at least the non-selective bit lines to use the virtual voltage with weak driving ability for charging during at least the time from t2 to t3 when starting to discharge the selective bit lines connected to selective storage cells to a GND voltage level at time t2, and then applying program voltages to selective word lines.