US Patent 11121261 Semiconductor substrate
Patent 11121261 was granted and assigned to AU Optronics on September, 2021 by the United States Patent and Trademark Office.
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A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.
US Patent 11121261 Semiconductor substrate
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