US Patent 11127473 Memory apparatus and data reading method thereof

A memory apparatus and a data reading method thereof are provided. In the method, a plurality of memory cells of the memory apparatus are read to obtain read data, in which a threshold voltage of each memory cell is sensed and respectively compared with a first reference voltage and a second reference voltage to determine bit values. The first reference voltage and the second reference voltage are used to distinguish different states of the memory cell and the second reference voltage is larger than the first reference voltage. The bit values of the memory cells having the threshold voltage between the first reference voltage and the second reference voltage in the read data are gradually changed and syndromes of the changed read data are calculated. The read data is corrected according to values of the syndromes.