US Patent 11127859 Semiconductor device and manufacturing method thereof
Patent 11127859 was granted and assigned to Nanya Technology Corporation on September, 2021 by the United States Patent and Trademark Office.
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A semiconductor device includes a channel structure, a dielectric structure, a gate structure, a first conductive structure, and a second conductive structure. The channel structure has a top surface, a bottom surface, and a sidewall extending from the top surface to the bottom surface. The first conductive structure is disposed on the bottom surface of the channel structure and includes a body portion and at least one convex portion, and a top surface of the convex portion is higher than a top surface of the body portion. The second conductive structure is disposed on the top surface of the channel structure and includes a body portion and at least one convex portion, and a bottom surface of the body portion is higher than a bottom surface of the convex portion.
US Patent 11127859 Semiconductor device and manufacturing method thereof
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