Patent 11133440 was granted and assigned to Bridgelux, Inc. on September, 2021 by the United States Patent and Trademark Office.
Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.