Patent attributes
Disclosed herein are techniques for bonding components of LEDs. According to certain embodiments, a micro-LED includes a first component having a semiconductor layer stack including an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The semiconductor layer stack includes a III-V semiconductor material. The micro-LED also includes a second component having a passive or an active matrix integrated circuit within a Si layer. A first dielectric material of the first component is bonded to a second dielectric material of the second component, first contacts of the first component are aligned with and bonded to second contacts of the second component, a surface recombination velocity (SRV) of the micro-LED is less than or equal to 3E4 cm/s, and an e-h diffusion of the micro-LED is less than or equal to 20 cm2/s.
