Patent attributes
A test method for a memory device including the following steps is provided. A redundancy function of the memory device is disable and a first data is written to a first memory array. The redundancy function of the memory device is enabled and a second data is written to a second memory array. The first data and the second data are complementary. A redundancy information is read from a non-volatile memory block according to a margin condition and the second memory array is read based on the redundancy information to obtain a first readout data. A first test result is generated by comparing the second data and the first readout data. The second memory array includes a part of memory cells of the first memory array and at least one redundancy memory cell.
