US Patent 11164783 Manufacturing method of semiconductor device with metal film

A manufacturing method of a semiconductor device with a metal film includes a cut groove forming step of causing a cutting blade to cut into a first surface of a workpiece and forming cut grooves with a depth that exceeds the finished thickness of the workpiece along planned dividing lines, a protective member sticking step of sticking a protective member to the first surface of the workpiece, a grinding step of grinding the side of a second surface until the thickness of the workpiece becomes the finished thickness to divide the workpiece into semiconductor devices, a metal film covering step of covering, by a metal film, the side surface of each of the semiconductor devices for which the protective member is stuck to the side of the first surface and the side of the second surface after the grinding, and a protective member removing step of removing the protective member.