US Patent 11164886 Three-dimensional semiconductor memory device

A three-dimensional semiconductor memory device including: a substrate including a cell array region and a connection region; and an electrode structure extending along a first direction from the cell array region to the connection region and including a plurality of electrodes vertically stacked on the substrate, each of the electrodes including an electrode portion on the cell array region and a pad portion on the connection region, wherein the electrodes include a first electrode located at a first level from the substrate and a second electrode located at a second level from the substrate, the second level being higher than the first level, and the pad portion of the first electrode is closer to the cell array region than the pad portion of the second electrode.