Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Romain Lallement0
Brent A. Anderson0
Junli Wang0
Liying Jiang0
Ardasheir Rahman0
Date of Patent
November 16, 2021
Patent Application Number
16502172
Date Filed
July 3, 2019
Patent Primary Examiner
Patent abstract
Methods for doping a semiconductor layer include forming a first mask on a first region of a semiconductor layer. A second region of the semiconductor layer, that is not covered by the first mask, is doped. A second mask is formed on the second region of the semiconductor layer. The first mask is etched away. The first region of the semiconductor layer is doped.
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