Is a
Patent attributes
Patent Jurisdiction
Patent Number
Date of Patent
November 16, 2021
Patent Application Number
16968872
Date Filed
November 29, 2018
Patent Primary Examiner
Patent abstract
In a SiC-MOSFET, to increase the threshold voltage while reducing the channel resistance is difficult. And, when the channel resistance is lowered, the reliability may be reduced in such a manner that a current may flow when the device is turned off and malfunction may occur when the device is used as a normally-off device. According to the present invention, the threshold voltage is increased while the channel resistance is reduced, and reliability when used as a normally-off device is improved by adding at least any of sulfur, selenium, and tellurium to the channel region of the SiC MOSFET.
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