Patent attributes
A semiconductor device includes a semiconductor part, first and second electrodes and a control electrode. The semiconductor part is provided between the first and second electrode. The control electrode is provided in a trench between the semiconductor part and the second electrode. The semiconductor part includes first and second layers. Between the first layer of a first conductivity type and the second electrode, the second layer of a second conductivity type is provided. The second electrode includes first and second contact portions. The first contact portion extends into the second layer. The second contact portion contacts a surface of the semiconductor part. In the second layer, the first contact portion has a first width at a first position and a second width at a second position. The first position is positioned between the first electrode and the second position. The first width is larger than the second width.
