US Patent 11177404 Fin-based photodetector structure
Patent 11177404 was granted and assigned to GlobalFoundries on November, 2021 by the United States Patent and Trademark Office.
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A photodetector disclosed herein includes an N-doped waveguide structure defined in a semiconductor material, wherein the N-doped waveguide structure comprises a plurality of first fins. Each adjacent pair of the plurality of first fins is separated by a trench formed in the semiconductor material. The photodetector also includes a detector structure positioned on the N-doped waveguide structure, wherein a portion of the detector structure is positioned laterally between the plurality of first fins. The detector structure comprises a single crystal semiconductor material. The photodetector also includes a first diffusion region that extends from the bottom surface of the trench into the semiconductor material, wherein the first diffusion region comprises atoms of the single crystal semiconductor material of the detector structure.
US Patent 11177404 Fin-based photodetector structure
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