Patent 11183396 was granted and assigned to Tokyo Electron on November, 2021 by the United States Patent and Trademark Office.
A substrate processing method according to the present disclosure includes heating and removing. The heating includes heating a substrate with a copper film that is formed thereon. The removing includes removing a copper film that is formed on a peripheral part of the substrate after the heating by supplying a processing liquid that contains an acidic chemical liquid to the peripheral part.