Is a
Patent attributes
Patent Jurisdiction
Patent Number
Patent Inventor Names
Chih-Wei Hu0
Teng-Hao Yeh0
Date of Patent
November 23, 2021
0Patent Application Number
162571650
Date Filed
January 25, 2019
0Patent Primary Examiner
Patent abstract
A memory device and a manufacturing method for the same are provided. The memory device comprises a stack structure and a channel structure. The stack structure is on a substrate and comprises gate electrodes and insulating films stacked alternately. The channel structure is electrically coupled to the gate electrodes, and is on sidewall surfaces of the gate electrodes. The channel structure comprises a first channel structure and a second channel structure. The second channel structure is on an upper surface of the first channel structure. The first channel structure and/or the second channel structure has a ring shape.
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