Patent 11183525 was granted and assigned to Samsung on November, 2021 by the United States Patent and Trademark Office.
An image sensor includes a substrate including a plurality of unit pixels, a stack structure on the substrate, and a grid pattern between ones of the plurality of unit pixels on the stack structure. The grid pattern includes a lower grid pattern and an upper grid pattern on the lower grid pattern, the lower grid pattern including lanthanum oxide (LaO), amorphous silicon (a-Si), or polysilicon (poly-Si) and the upper grid pattern including a conductive material.