US Patent 11183540 Imaging element, method of manufacturing imaging element, and imaging device

An imaging element according to an embodiment of the present disclosure includes: a first electrode and a second electrode facing each other; and a photoelectric conversion layer including a p-type semiconductor and an n-type semiconductor, and provided between the first electrode and the second electrode, in which the photoelectric conversion layer has an exciton charge separation rate of 1×1010 s−1 to 1×1016 s−1 both inclusive in a p-n junction surface formed by the p-type semiconductor and the n-type semiconductor.