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US Patent 11183566 Performance silicon carbide power devices
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Patent
Date Filed
May 5, 2021
Date of Patent
November 23, 2021
Patent Application Number
17308303
Patent Citations Received
US Patent 11631762 Planar MOSFET with reduced sensitivity of JFET resistance to process variation
0
US Patent 11397209 Methods of monitoring conditions associated with aging of silicon carbide power MOSFET devices in-situ, related circuits and computer program products
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11183566
Patent Primary Examiner
Mohammed R Alam
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