Patent attributes
Methods of manufacturing redistribution circuit structures are disclosed and one of the methods includes the following steps. A seed layer is formed over a die and an encapsulant encapsulating the die. A photoresist material is formed over the seed layer. The photoresist material is exposed through a phase shift mask to an I-line wavelength within an I-line stepper using a numerical aperture equal to or less than 0.18. The photoresist material is developed to form a photoresist layer including photoresist patterns and openings therebetween. A conductive material is formed in the openings. The photoresist patterns are removed to form conductive patterns. By using the conductive patterns as a mask, the seed layer is partially removed, to form seed layer patterns under the conductive patterns, wherein redistribution conductive patterns include the seed layer patterns and the conductive patterns respectively.
