Patent attributes
A semiconductor device includes a plurality of first semiconductor dies, a first adhesive layer, a plurality of second semiconductor dies, a second adhesive layer, and a plurality of first metal bumps. The first semiconductor dies are embedded in a first photosensitive layer of a first group of wafers. The first adhesive layer is disposed between at least two of the first group of wafers to form a first structure. The second semiconductor dies are embedded in a second photosensitive layer of a second group of wafers. The second adhesive layer is disposed between at least two of the second group of wafers to form a second structure. The first metal bumps are disposed between the first structure and second structure, in which the first structure is connected to the second structure with the first metal bumps.
