US Patent 11189701 Bipolar junction transistor with vertically integrated resistor

Vertical bipolar junction transistors (VBJTs), each with one or more resistors connected in a circuit in different circuit configurations, are disclosed. The VBJT has an emitter substructure that includes an emitter layer, a collector, an intrinsic base, one or more doped epitaxy regions, and one or more resistors. The intrinsic base, the doped epitaxy region(s), and the resistor(s) are stacked upon one another in a channel between the emitter layer and the collector. Various circuit configurations and structures are described including a common-collector circuit, a common-emitter circuit, and an emitter-degenerate circuit. Methods of making these configuration/structures are disclosed.