Patent attributes
Integrated circuit devices including standard cells are provided. The integrated devices may include a lower transistor region and an upper transistor region. The lower transistor region may include a lower active region, lower source/drain regions, and lower gate structures arranged alternately with the lower source/drain regions. The upper transistor region may include an upper active region, upper source/drain regions, and upper gate structures arranged alternately with the upper source/drain regions. The upper gate structures may include a first upper gate structure. The integrated devices may also include an input wire, an input via electrically connecting the input wire to the first upper gate structure, and a routing wire electrically connecting a pair of the lower source/drain regions or a pair of the upper source/drain regions. An upper surface of the routing wire may be closer to the substrate than an upper surface of the input wire.