Patent attributes
A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to −5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.
