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US Patent 11257916 Electronic device having multi-thickness gate insulator

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
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Date Filed
June 24, 2019
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Date of Patent
February 22, 2022
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Patent Application Number
16450149
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Patent Citations
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US Patent 10586851 Silicon carbide semiconductor device and method of manufacturing
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US Patent 10679699 Non-volatile memory with double capa implant
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US Patent 10720518 Semiconductor device
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US Patent 10700070 Embedded transistor
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US Patent 10833164 LDMOS transistors and associated systems and methods
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US Patent 10096599 Methods of integrating multiple gate dielectric transistors on a tri-gate (finFET) process
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US Patent 10366895 Methods for forming a semiconductor device using tilted reactive ion beam
Patent Inventor Names
Zia Hossain
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Donald Zaremba
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Gordon M. Grivna
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Prasad Venkatraman
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Alexander Young
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Balaji Padmanabhan
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11257916
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Patent Primary Examiner
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Ida M. Soward
0

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