Patent attributes
A semiconductor device having high on-state current and favorable reliability is provided. The semiconductor device includes a first insulator; a first oxide over the first insulator; a second oxide over the first oxide; a third oxide and a fourth oxide over the second oxide; a first conductor over the third oxide; a second conductor over the fourth oxide; a fifth oxide over the second oxide; a second insulator over the fifth oxide; and a third conductor positioned over the second insulator and overlapping with the second oxide. The fifth oxide is in contact with each of a side surface of the third oxide and a side surface of the fourth oxide. The conductivity of the third oxide is higher than the conductivity of the second oxide, and the conductivity of the fourth oxide is higher than the conductivity of the second oxide.
