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US Patent 11264326 Contact via formation
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Patent
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Date Filed
May 29, 2020
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Date of Patent
March 1, 2022
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Patent Application Number
16888381
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Patent Citations
US Patent 10886361 Semiconductor devices including resistor structures
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US Patent 10833017 Contact for semiconductor device
US Patent 11043418 Middle of the line self-aligned direct pattern contacts
US Patent 10163691 Low-K dielectric interconnect systems
US Patent 10170322 Atomic layer deposition based process for contact barrier layer
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Patent Inventor Names
Lin-Yu Huang
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Chih-Hao Wang
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Kuan-Lun Cheng
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Li-Zhen Yu
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Cheng-Chi Chuang
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Chia-Hao Chang
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11264326
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Patent Primary Examiner
Karen Kusumakar
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