Is a
Patent attributes
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Yen-Chun Lin0
Chia-Ling Chan0
Date of Patent
March 1, 2022
0Patent Application Number
170270780
Date Filed
September 21, 2020
0Patent Citations
Patent Primary Examiner
Patent abstract
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, forming a first spacer over the dummy gate structure, implanting a first dopant in the fin to form a doped region of the fin adjacent the first spacer, removing the doped region of the fin to form a first recess, wherein the first recess is self-aligned to the doped region, and epitaxially growing a source/drain region in the first recess.
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