Patent attributes
A bulk acoustic wave resonator includes: a substrate; a first electrode disposed above the substrate; a piezoelectric layer disposed above at least a portion of the first electrode; and a second electrode disposed above at least a portion of the piezoelectric layer. A first gap is formed between the piezoelectric layer and one of the first and second electrodes. The first gap includes a first inner gap disposed in an active area of the bulk acoustic wave resonator, and having a first spacing distance between the piezoelectric layer and the one of the first and second electrodes, and a first outer gap disposed outwardly of the active area and having a second spacing distance, different than the first spacing distance, between the piezoelectric layer and the one of the first and second electrodes.
