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US Patent 11282961 Enhanced bottom dielectric isolation in gate-all-around devices

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
March 24, 2020
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Date of Patent
March 22, 2022
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Patent Application Number
16828162
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Patent Citations
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US Patent 10453824 Structure and method to form nanosheet devices with bottom isolation
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US Patent 10256158 Insulated epitaxial structures in nanosheet complementary field effect transistors
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US Patent 10720431 Methods of fabricating semiconductor devices having gate-all-around structure with oxygen blocking layers
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US Patent 10032867 Forming bottom isolation layer for nanosheet technology
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US Patent 10170638 Nanosheet substrate isolated source/drain epitaxy by dual bottom spacer
Patent Inventor Names
Ruilong Xie
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Andrew Greene
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Julien Frougier
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Kangguo Cheng
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11282961
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Patent Primary Examiner
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Changhyun Yi
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CPC Code
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H01L 2029/7858
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H01L 29/785
0

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