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US Patent 11282965 Fabrication method of semiconductor device
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Is a
Patent
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Date Filed
January 11, 2019
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Date of Patent
March 22, 2022
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Patent Application Number
16959259
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Patent Citations
US Patent 10170599 Semiconductor device including insulating films with different thicknesses and method for manufacturing the semiconductor device
US Patent 10347771 Stacked oxide material, semiconductor device, and method for manufacturing the semiconductor device
US Patent 10079310 Semiconductor device including stacked oxide semiconductor material
US Patent 10290720 Semiconductor device and method for manufacturing the same
Patent Inventor Names
Takashi Hamochi
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Yasutaka Nakazawa
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Takayuki Ohide
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Kenichi Okazaki
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11282965
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Patent Primary Examiner
Cheung Lee
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CPC Code
H01L 21/02518
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H01L 21/02554
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H01L 21/02565
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H01L 21/02612
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H01L 21/02631
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H01L 21/44
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H01L 21/441
0
H01L 21/443
0
H01L 21/47635
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H01L 27/1214
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