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US Patent 11289644 Magnetic tunnel junction having all-around structure
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Patent
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Date Filed
December 19, 2019
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Date of Patent
March 29, 2022
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Patent Application Number
16720133
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Patent Citations
US Patent 10283561 Two-terminal spintronic devices
US Patent 10333058 Nanosecond-timescale low-error switching of 3-terminal magnetic tunnel junction circuits through dynamic in-plane-field assisted spin-hall effect
Patent Inventor Names
Pouya Hashemi
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Daniel Worledge
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Jonathan Z. Sun
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Kotb Jabeur
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11289644
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Patent Primary Examiner
Jami Valentine Miller
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CPC Code
H01L 27/22
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