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US Patent 11289649 Non-volatile memory elements with a narrowed electrode
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Patent
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Date Filed
April 13, 2020
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Date of Patent
March 29, 2022
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Patent Application Number
16846940
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Patent Citations
US Patent 10003022 RRAM cell structure with conductive etch-stop layer
Patent Citations Received
US Patent 11705461 Display substrate, manufacturing method thereof, display panel and display device
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Patent Inventor Names
Eng Huat Toh
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Lup San Leong
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Kin Wai Tang
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Curtis Chun-I Hsieh
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Juan Boon Tan
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Patent Jurisdiction
United States Patent and Trademark Office
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Patent Number
11289649
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Patent Primary Examiner
Andres Munoz
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