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US Patent 11296029 Semiconductor device and method of fabricating same

Overview Structured Data Issues Contributors Activity

Is a

Current Assignee

Date Filed

August 31, 2020

Date of Patent

April 5, 2022

Patent Applicant

Patent Application Number

17007265

Patent Citations

US Patent 10121874 Self-aligned bottom up gate contact and top down source-drain contact structure in the premetallization dielectric or interlevel dielectric layer of an integrated circuit

US Patent 10204994 Methods of forming a semiconductor device with a gate contact positioned above the active region

US Patent 10347744 Method and structure of forming FinFET contact

US Patent 10388747 Gate contact structure positioned above an active region with air gaps positioned adjacent the gate structure

Patent Jurisdiction

United States Patent and Trademark Office

Patent Number

Patent Primary Examiner

CPC Code

•••

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