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US Patent 11296079 PMOS and NMOS contacts in common trench
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Is a
Patent
Current Assignee
Intel
Date Filed
December 28, 2017
Date of Patent
April 5, 2022
Patent Applicant
Intel
Patent Application Number
16649386
Patent Citations Received
US Patent 11688626 Nanosheet transistor with self-aligned dielectric pillar
0
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11296079
Patent Primary Examiner
Feifei Yeung Lopez
CPC Code
H01L 29/785
H01L 29/78696
H01L 29/45
H01L 29/205
H01L 29/40
H01L 27/0886
H01L 21/823871
H01L 29/42392
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