Is a
Patent attributes
Patent Applicant
Current Assignee
Patent Jurisdiction
Patent Number
Patent Inventor Names
Hsin-Hao Yeh0
Fu-Ting Yen0
Date of Patent
April 5, 2022
0Patent Application Number
164217440
Date Filed
May 24, 2019
0Patent Citations
Patent Primary Examiner
A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess.
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