US Patent 11296226 Transistor having wrap-around source/drain contacts and under-contact spacers

Embodiments of the invention are directed to a method of forming a semiconductor device. In a non-limiting example, the method includes forming a first channel region over a substrate, forming a second channel region over the first channel region, and forming a merged source or drain (S/D) region over the substrate and adjacent to the first channel region and the second channel region. The merged S/D region is communicatively coupled to the first channel region and the second channel region. A wrap-around S/D contact is formed such that it is on a top surface, sidewalls, and a bottom surface of the merged S/D region.