A data storage device can be arranged with a semiconductor memory having a plurality of erasure blocks accessed by a controller to store data. An access count for each respective erasure block can be generated to allow a wear range for the semiconductor memory to be computed based on the respective access counts with the controller. A performance impact of the wear range is evaluated with the controller in order to intelligently alter a deterministic window of a first erasure block of the plurality of erasure blocks in response to the performance impact.