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US Patent 11328759 Signal preserve in MRAM during reading

OverviewStructured DataIssuesContributorsActivity
Is a
Patent
Patent
0
Date Filed
October 2, 2020
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Date of Patent
May 10, 2022
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Patent Application Number
17061626
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Patent Citations
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US Patent 10545692 Memory maintenance operations during refresh window
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US Patent 10600463 Magnetic storage device having a memory cell including a magnetoresistive effect element and a selector which includes titanium (Ti), germanium (Ge) and tellurium (Te)
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US Patent 10762973 Suppressing program disturb during program recovery in memory device
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US Patent 10784313 Integrated resistive processing unit to avoid abrupt set of RRAM and abrupt reset of PCM
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US Patent 11024358 Differential compute-in-memory bitcell
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US Patent 10832778 Negative voltage wordline methods and systems
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US Patent 11114166 Semiconductor memory device
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US Patent 10373682 Write set operation for memory device with bit line capacitor drive
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US Patent 10497438 Cross-point memory array addressing
Patent Citations Received
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US Patent 11854592 Signal amplification in MRAM during reading, including a pair of complementary transistors connected to an array line
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Patent Inventor Names
James O'Toole
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Ward Parkinson
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Thomas Trent
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Nathan Franklin
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11328759
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Patent Primary Examiner
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Michael T. Tran
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CPC Code
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H01L 27/224
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H01L 43/02
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G11C 11/161
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G11C 11/1675
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G11C 11/1673
0
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G11C 11/1659
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