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US Patent 11342163 Variable depth edge ring for etch uniformity control

OverviewStructured DataIssuesContributors

Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
Lam Research
Lam Research
Current Assignee
Lam Research
Lam Research
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11342163
Date of Patent
May 24, 2022
Patent Application Number
16871829
Date Filed
May 11, 2020
Patent Citations
‌
US Patent 10510516 Moving focus ring for plasma etcher
‌
US Patent 10591934 Mass flow controller for substrate processing
‌
US Patent 10699878 Chamber member of a plasma source and pedestal with radially outward positioned lift pins for translation of a substrate c-ring
‌
US Patent 10651015 Variable depth edge ring for etch uniformity control
‌
US Patent 10090161 Plasma etching apparatus and plasma etching method
‌
US Patent 10170277 Apparatus and methods for dry etch with edge, side and back protection
‌
US Patent 10242848 Carrier ring structure and chamber systems including the same
‌
US Patent 10410832 Control of on-wafer CD uniformity with movable edge ring and gas injection adjustment
...
Patent Primary Examiner
‌
Rick K Chang
CPC Code
‌
H01J 37/3244
‌
H01J 37/32715
‌
H01J 37/32082
‌
H01J 2237/334

A method of operating a substrate support includes arranging a substrate on an inner portion of the substrate support and calculating a desired pocket depth of the substrate support using data indicative of a relationship between the desired pocket depth and at least one process parameter. The desired pocket depth corresponds to a desired distance between an upper surface of an edge ring surrounding the inner portion and an upper surface of the substrate. The method further includes selectively controlling, based on the desired pocket depth as calculated, an actuator to raise and lower at least one of the edge ring and the inner portion to adjust the distance between the upper surface of the edge ring and the upper surface of the substrate.

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