US Patent 11342446 Nanosheet field effect transistors with partial inside spacers
Patent 11342446 was granted and assigned to Tessera (company) on May, 2022 by the United States Patent and Trademark Office.
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US Patent 11342446 Nanosheet field effect transistors with partial inside spacers
A method of forming a nanosheet device, including forming a channel stack on a substrate, where the channel stack includes at least one nanosheet channel layer and at least one sacrificial release layer, forming a stack cover layer on at least a portion of the channel stack, forming a dummy gate on at least a portion of the stack cover layer, wherein at least a portion of the at least one nanosheet channel layer and at least one sacrificial release layer is exposed on opposite sides of the dummy gate, removing at least a portion of the at least one sacrificial release layer on each side of the dummy gate to form a sacrificial supporting rib, and forming an inner spacer layer on exposed portions of the at least one nanosheet channel layer and at least one sacrificial supporting rib.
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