US Patent 11348769 Plasma-enhanced anneal chamber for wafer outgassing
Patent 11348769 was granted and assigned to Applied Materials on May, 2022 by the United States Patent and Trademark Office.
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Patent Inventor Names
Dongming Iu0
Kong Lung Samuel Chan0
Lara Hawrylchak0
Matthew D. Scotney-Castle0
Matthew Spuller0
Norman L. Tam0
Stephen Moffatt0
Edits on 26 Sep, 2022
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Patent Number
113487690
Date of Patent
May 31, 2022
0Patent Application Number
170147360
Date Filed
September 8, 2020
0Patent Primary Examiner
Edits on 1 Jun, 2022
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US Patent 11348769 Plasma-enhanced anneal chamber for wafer outgassing
Article
Implementations described herein provide for thermal substrate processing apparatus including two thermal process chambers, each defining a process volume, and a substrate support disposed within each process volume. One or more remote plasma sources may be in fluid communication with the process volumes and the remote plasma sources may be configured to deliver a plasma to the process volumes. Various arrangements of remote plasma sources and chambers are described.
Infobox
Is a
Patent applicant
Current assignee
Patent jurisdiction
Patent number
11348769
Date of patent
May 31, 2022
Patent application number
17014736
Date Filed
September 8, 2020
Patent primary examiner
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