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US Patent 11367613 Deposition of SiN
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Patent
Date Filed
August 7, 2020
Date of Patent
June 21, 2022
Patent Application Number
16987961
Patent Citations
US Patent 10395917 Si precursors for deposition of SiN at low temperatures
US Patent 10424477 Si precursors for deposition of SiN at low temperatures
US Patent 10410857 Formation of SiN thin films
US Patent 10580645 Plasma enhanced atomic layer deposition (PEALD) of SiN using silicon-hydrohalide precursors
US Patent 10269558 Method of forming a structure on a substrate
US Patent 10269559 Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11367613
Patent Primary Examiner
Karen Kusumakar
CPC Code
H01L 21/02274
H01L 21/02211
H01L 21/02271
H01L 21/76834
C23C 16/345
C23C 16/45542
C23C 16/34
C23C 16/4554
H01L 21/0217
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