US Patent 11373703 Semiconductor storage device

During a writing operation to change a resistance of a part of a variable resistance material film facing a first word line, the semiconductor storage device applies a first voltage to the first word line, applies a second voltage to a second word line, and applies a third voltage to a third word line. The first, second, and third word lines are stacked above a substrate. The second word line is adjacent to the first word line in the stacking direction. The third word line is not adjacent to the first word line in the stacking direction.