US Patent 11373876 Film forming method and film forming apparatus
Patent 11373876 was granted and assigned to Tokyo Electron on June, 2022 by the United States Patent and Trademark Office.
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Satoshi Takagi0
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US Patent 11373876 Film forming method and film forming apparatus
Article
A film forming method includes: removing a natural oxide film formed on a front surface of a metal-containing film by supplying a hydrogen fluoride gas to a substrate accommodated in a processing container, the substrate having the metal-containing film formed thereon, and the metal-containing film including no metal oxide film; and forming a silicon film on the metal-containing film by supplying a silicon-containing gas into the processing container, wherein the step of forming the silicon film occurs after the step of removing the natural oxide film.
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Patent number
11373876
Date of patent
June 28, 2022
Patent application number
16514989
Date Filed
July 17, 2019
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