Patent attributes
The disclosed technology relates generally to semiconductor devices, and more particularly to power semiconductor devices in which effects of charge trapping are compensated. A radio frequency (RF) power transmitter system comprises a RF power semiconductor device that outputs a time-varying gain characteristic from a RF signal input waveform originating from a digital input, wherein the time-varying gain characteristic includes a gain error associated with charge-trapping events having a memory effect on the RF power semiconductor device lasting longer than 1 microsecond. The RF power transmitter system further comprises circuitry configured to apply an analog gate bias waveform to the RF power semiconductor device based on the time-varying gain characteristic to reduce the gain error.
