Patent attributes
According to the technique of the disclosure, there is provided a substrate processing apparatus including: a substrate retainer; a heat insulating assembly; a process chamber; a gas supplier including openings bored toward the wafer; a gas discharger including main exhaust openings bored toward the wafer; an exhaust port; an intermediate exhaust opening provided on a side wall of the process chamber at a position facing the heat insulating assembly; and a supply chamber exhaust port provided on the side wall of the process chamber at a height corresponding to the intermediate exhaust opening. The heat insulating assembly includes a constriction at a position corresponding to the intermediate exhaust opening, wherein its outer diameter is smaller than that of a portion of the heat insulating assembly above the position and that of another portion of the heat insulating assembly below the position.
