Patent attributes
In one embodiment, a method, a method of manufacturing a semiconductor is disclosed. A monitored semiconductor manufacturing system (monitored system) is operated over a period of time, the monitored system comprising an impedance matching network coupled between a radio frequency (RF) source and a plasma chamber. First values for a parameter of the monitored system are received, the first values comprising different values for the parameter over the time period of operation of the monitored system, and a learning model is trained using the first values for the parameter. A substrate is then placed in a plasma chamber of a controlled semiconductor manufacturing system (controlled system). A characteristic of the controlled system is determined using a current value of the parameter and the trained learning model. An action is then taken upon the controlled system to address the determined characteristic.