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US Patent 11398559 Mitigation of time dependent dielectric breakdown
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Patent
Date Filed
April 16, 2020
Date of Patent
July 26, 2022
Patent Application Number
16851079
Patent Citations
US Patent 10431661 Transistor with inner-gate spacer
US Patent 10164039 Semiconductor device having metal gate
US Patent 10177148 Integrated circuit devices and methods of fabricating such devices
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11398559
Patent Primary Examiner
Mary A Wilczewski
CPC Code
H01L 21/28105
H01L 29/401
H01L 29/4236
H01L 29/42364
H01L 29/4966
H01L 29/4983
H01L 29/66348
H01L 29/66545
H01L 29/6656
H01L 29/66871
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