US Patent 11404336 Power module with metal substrate

A method of forming a power semiconductor module includes providing a substrate of planar sheet metal, forming channels in an upper surface of the substrate that partially extend through a thickness of the substrate and define a plurality of islands in the substrate, mounting a first semiconductor die on a first one of the islands, forming a molded body of encapsulant that covers the substrate, fills the channels, and encapsulates the semiconductor die, forming a hole in the molded body and a recess in the upper surface of the substrate beneath the hole, and arranging a press-fit connector in the hole and forming a mechanical and electrical connection between an interior end of the press-fit connector and the substrate.