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US Patent 11411097 Semiconductor device
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Date Filed
October 12, 2020
Date of Patent
August 9, 2022
Patent Applicant
Taiwan Semiconductor Manufacturing Company
Patent Application Number
17068769
Patent Citations
US Patent 11189714 Gate stack structure and method for forming the same
US Patent 11189727 FinFET contacts and method forming same
Patent Jurisdiction
United States Patent and Trademark Office
Patent Number
11411097
Patent Primary Examiner
Thao P. Le
CPC Code
H01L 21/02532
H01L 29/66545
H01L 21/31055
H01L 21/02639
H01L 21/02381
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